Title :
Microwave properties of InGaAlAs resonant-tunneling optical modulators
Author :
Lyubchenko, V.E. ; Alkeev, N.V. ; Ironside, C.N. ; Figueiredo, J.M.L. ; Stanley, C.R.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Fryazino, Russia
Abstract :
Impedance of resonant-tunneling heterostructure diodes (RTD) based on InGaAlAs and designed for modulation of optical radiation was experimentally studied in the frequency range of 45 MHz-18 GHz. The dependence of the equivalent circuit parameters versus bias voltage was analyzed and the current harmonic spectrum at varistor frequency multiplication was calculated. The effect of frequency multiplication was experimentally demonstrated at low frequencies
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; electric current; electric current measurement; electric impedance; electric impedance measurement; electro-optical modulation; equivalent circuits; frequency multipliers; gallium compounds; harmonic analysis; indium compounds; microwave devices; resonant tunnelling diodes; semiconductor device measurement; spectral analysis; 45 MHz to 18 GHz; InGaAlAs; RTD; bias voltage; current harmonic spectrum; equivalent circuit; impedance; microwave properties; optical modulation; resonant-tunneling heterostructure diodes; resonant-tunneling optical modulators; varistor frequency multiplication; Diodes; Equivalent circuits; Frequency conversion; Harmonic analysis; Impedance; Optical design; Optical modulation; Resonant tunneling devices; Varistors; Voltage;
Conference_Titel :
Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
83-906662-3-5
DOI :
10.1109/MIKON.2000.913893
