Title :
Technology and characterization of a fast MSM photodetector
Author :
Dobrzanski, L. ; Piotrowski, J.K. ; Malyshev, Sergei A.
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
Metal-semiconductor-metal photodetectors (MSM PD) based on the InGaAs light-absorbing layer have been fabricated and characterized. It has been demonstrated that despite the non-optimized design, the devices operate well up to 3 Ghz and can compete with professional p-i-n diodes. The conclusions for future device improvement have been drawn
Keywords :
gallium arsenide; indium compounds; light absorption; metal-semiconductor-metal structures; photodetectors; InGaAs; MSM PD; MSM photodetector; indium gallium arsenide; light-absorbing layer; metal-semiconductor-metal photodetectors; Bonding; Capacitance measurement; Detectors; Electrodes; Indium gallium arsenide; Metallization; Parasitic capacitance; Photodetectors; Schottky diodes; Semiconductor diodes;
Conference_Titel :
Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
83-906662-3-5
DOI :
10.1109/MIKON.2000.913956
