Title :
Measurements of high-speed MSM photodetectors
Author :
Paszkiewicz, B. ; Tomaska, M. ; Krnac, M. ; Kovac, J. ; Szreter, M. ; Boratynski, B.
Author_Institution :
Inst. of Microsyst. Technol., Tech. Univ. Wroclaw, Poland
Abstract :
GaAs MSM photodetectors with AlAs/GaAs DBR structures designed for an operating wavelength of 840 nm were characterized in the frequency and time domains. The frequency response of the MSMs, using a lightwave set-up and HP8408 network analyzer, was measured. The photodetector response to the optical pulse of a fast laser diode excitation was evaluated. 3-dB bandwidth in excess of 4 GHz was obtained. Frequency and pulse responses dependence on photodetector bias was characterized
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; frequency response; gallium arsenide; metal-semiconductor-metal structures; photodetectors; semiconductor device measurement; 840 nm; AlAs-GaAs; AlAs/GaAs DBR structures; GaAs high-speed MSM photodetectors; HP8408 network analyzer; distributed Bragg optical reflector; fast laser diode excitation; frequency domain; frequency response; lightwave set-up; metal semiconductor metal; optical pulse; photodetector bias; photodetector response; pulse response; time domain; Bandwidth; Diode lasers; Distributed Bragg reflectors; Frequency measurement; Frequency response; Gallium arsenide; Laser excitation; Optical pulses; Photodetectors; Wavelength measurement;
Conference_Titel :
Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
83-906662-3-5
DOI :
10.1109/MIKON.2000.914033
