DocumentCode :
1744296
Title :
Upgrading metallurgical grade (MG) silicon for use as solar grade feedstock
Author :
Khattak, Chandra P. ; Joyce, David B. ; Schmid, Frederick
Author_Institution :
Crystal Syst. Inc., Salem, MA, USA
fYear :
2000
fDate :
2000
Firstpage :
49
Lastpage :
52
Abstract :
The most attractive approach to upgrade metallurgical-grade (MG) silicon is to chemically refine impurities, especially boron (B) and phosphorus (P), in the molten state followed by directional solidification. The most problematic impurity is B as it has the highest segregation coefficient. A simple refining process of blowing gas through the melt was developed to reduce B in MG silicon effectively, and the process has been scaled up to charge sizes up to 150 kg. The B reduction has been maintained with increase in charge sizes and confirmed by using it on B-doped silicon at ten times the concentration. The simplicity of the refining process when adapted to a commercial MG silicon plant is expected to produce solar grade (SoG) silicon at low cost
Keywords :
boron; directional solidification; elemental semiconductors; impurities; phosphorus; segregation; semiconductor device manufacture; semiconductor device measurement; semiconductor device testing; semiconductor doping; silicon; solar cells; Si:B; Si:P; charge sizes; directional solidification; gas blowing; impurities chemical refining; metallurgical grade Si upgrading; refining process; segregation coefficient; semiconductor doping; solar cell materials; solar grade feedstock; Artificial intelligence; Boron; Chemicals; Costs; Impurities; Manufacturing industries; Photovoltaic systems; Production; Refining; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915750
Filename :
915750
Link To Document :
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