DocumentCode
1744322
Title
Efficiency improvement of buried contact solar cells using MgF2/CeO2 double layer antireflection coatings
Author
Lee, I. ; Lim, D.G. ; Kim, K.H. ; Kim, S.H. ; Lee, S.H. ; Kim, D.W. ; Choi, E.C. ; Kim, D.S. ; Yi, J.
Author_Institution
Sch. of Electr. & Comput. Eng., Sung Kyun Kwan Univ., Suwon, South Korea
fYear
2000
fDate
2000
Firstpage
403
Lastpage
406
Abstract
This paper describes an efficiency improvement of buried contact solar cell (BCSC) with a structure of MgF2/CeO2/Ag/Cu/Ni grid/n+ emitter/p-type Si base/P+/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF2/CeO2. The authors investigated CeO 2 films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 μm to 1.1 μm. BCSC cell efficiency was improved from 16.2% without any AR coating to 19.9% by employing DLAR coatings. Further details on MgF2/CeO2 DLAR coatings on the BCSC cells are presented in this paper
Keywords
antireflection coatings; cerium compounds; elemental semiconductors; magnesium compounds; reflectivity; refractive index; silicon; solar cells; 0.4 to 1.1 mum; 19.9 percent; AR layer; MgF2-CeO2; MgF2/CeO2 double layer antireflection coatings; MgF2/CeO2/Ag/Cu/Ni grid/n+ emitter/p-type Si base/P+/Al; Si; Si solar cells; buried contact solar cells; efficiency; lattice constant; reflectance; refractive index; Chemical lasers; Coatings; Contacts; Nickel; Optical films; Optical surface waves; Photovoltaic cells; Refractive index; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915852
Filename
915852
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