DocumentCode
1744326
Title
High-efficiency Cd2SnO4/Zn2SnO4/Znx Cd1-xS/CdS/CdTe polycrystalline thin-film solar cells
Author
Wu, X. ; Ribelin, R. ; Dhere, R.G. ; Albin, D.S. ; Gessert, T.A. ; Asher, S. ; Levi, D.H. ; Mason, A. ; Moutinho, H.R. ; Sheldon, P.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2000
fDate
2000
Firstpage
470
Lastpage
474
Abstract
CdTe-based thin-film solar cells have been limited to the conventional SnO2/CdS/CdTe device structure. In this paper, we report a modified device structure consisting of Cd2SnO 4/Zn2SnO4/ZnxCd1-x S/CdS/CdTe layers, that yields improved performance and reproducibility. Cadmium stannate (Cd2SnO4, or CTO) transparent conductive oxide (TCO) films have several significant advantages over conventional SnO2 films. CTO-based CdTe cells have approximately 1 mA/cm2 higher Jsc than SnO 2-based CdTe cells. Integrating zinc stannate (Zn2SnO4, or ZTO) into the device as a buffer layer helps maintain high Voc and fill factor when reducing CdS thickness to improve Jsc. XPS and SIMS results show substantial interdiffusion between the CdS and ZTO layers. This feature can be used to optimize device performance and reproducibility. We have fabricated a Cd2SnO4/Zn2SnO4/Znx Cd1-xS/CdS/CdTe cell with an NREL-confirmed total-area efficiency of 15.8%
Keywords
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; chemical interdiffusion; secondary ion mass spectroscopy; semiconductor thin films; solar cells; tin compounds; zinc compounds; 15.8 percent; Cd2SnO4; Cd2SnO4-Zn2SnO4 -ZnCdS-CdS-CdTe; Cd2SnO4/Zn2SnO4/Zn xCd1-xS/CdS/CdTe solar cells; CdS thickness reduction; SIMS; XPS; Zn2SnO4; buffer layer; cadmium stannate; high Voc; high fill factor; high-efficiency; interdiffusion; polycrystalline thin-film solar cells; total-area efficiency; transparent conductive oxide films; zinc stannate; Absorption; Annealing; Argon; Cadmium; Conductivity; Current density; Glass; Microstructure; Optical films; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915873
Filename
915873
Link To Document