Title :
Electron beam induced effects in CdTe photovoltaics
Author :
Harju, R. ; Karpov, V.G. ; Grecu, D. ; Dorer, G.
Author_Institution :
Solar LLC, Perrysburg, OH, USA
Abstract :
The authors used a SEM technique to measure in situ EBIC decay in CdTe photovoltaic cells. They have observed: (i) EBIC signal shows a considerable, continuous decay depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic decay time differs considerably between samples of different recipes, some of them showing remarkable stability; and (iii) the decay rate fluctuates between different spots on the same sample. Their phenomenological model relates the observed decay to defects caused by radiation in semiconductor absorber layer
Keywords :
EBIC; II-VI semiconductors; cadmium compounds; scanning electron microscopy; semiconductor device measurement; semiconductor device testing; solar cells; CdTe; CdTe solar cells; EBIC signal; SEM technique; characteristic decay time; continuous decay; decay rate; electron beam induced effects; electron-beam current; energy; in situ EBIC decay measurement; phenomenological model; sample treatment; scan area; semiconductor absorber layer radiation; 1f noise; Annealing; Area measurement; Current measurement; Electron beams; Electron microscopy; Photovoltaic cells; Scanning electron microscopy; Stability; Time measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915948