Title :
The role of In2Se3 precursor properties in multi-stage Cu(In,Ga)Se2 fabrication [solar cells]
Author :
Eisgruber, I.L. ; Treece, R.E. ; Marshall, C. ; Engel, J.R.
Author_Institution :
ITN Energy Syst., Wheat Ridge, CO, USA
Abstract :
The use of (In,Ga)2Se3 precursors to form Cu(In,Ga)Se2 (CIGS) solar cells films is widespread. The properties of the In2Se3 precursor are important to the CIGS film growth and ultimately the device performance. The (In,Ga)2Se3 orientation, morphology and composition can be controlled by the Se/In flux ratio. The changes occurring in the In2Se3 at very low Se/In flux ratios may negatively impact device performance
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor device manufacture; semiconductor growth; semiconductor thin films; solar cells; (In,Ga)2Se3 precursors; (InGa)2Se3; CIGS film growth; Cu(In,Ga)Se2 solar cells; Cu(InGa)Se2; In2Se3; composition; device performance; morphology; multi-stage fabrication process; orientation; Costs; Crystallization; Fabrication; Glass; Morphology; Photovoltaic systems; Solar power generation; Substrates; Temperature sensors; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915958
