Title :
Growth analysis of chemical bath deposited In(OH)xSy films as buffer layers for CuInS2 thin film solar cells
Author :
Kaufmann, C. ; Dobson, P.J. ; Neve, S. ; Bohne, W. ; Klaer, J. ; Klenk, R. ; Pettenkofer, C. ; Rohrich, J. ; Scheer, R. ; Störkel, U.
Author_Institution :
Dept. of Eng. Sci., Oxford Univ., UK
Abstract :
Although the deposition of In(OH)xSy by chemical bath deposition has been successfully demonstrated before, the deposition mechanism remains unclear. Using X-ray photoelectron spectroscopy, the authors have identified two growth phases: an initial nucleation of mainly In(OH)xOy followed by rapid, mainly colloidal growth of In(OH)xSy. The deposited films are additionally characterized using elastic recoil detection analysis, transmission and scanning electron microscopy. An indirect energy band gap was observed at ~2.2 eV by optical transmission spectroscopy. The method has been used to make a Cd-free buffer layer for CuInS2 thin film solar cells and an efficiency of 9.1% has been achieved
Keywords :
X-ray photoelectron spectra; copper compounds; energy gap; indium compounds; scanning electron microscopy; semiconductor device measurement; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; transmission electron microscopy; 2.2 eV; 9.1 percent; CuInS2; CuInS2 thin-film solar cells; In(OH)xOy nucleation; In(OH)O; In(OH)S; X-ray photoelectron spectroscopy; buffer layers; chemical bath deposited In(OH)xSy films; colloidal growth; deposition mechanism; elastic recoil detection analysis; growth analysis; growth phases; indirect energy band gap; optical transmission spectroscopy; scanning electron microscopy; transmission electron microscopy; Buffer layers; Chemical analysis; Electron optics; Optical buffering; Optical films; Photonic band gap; Scanning electron microscopy; Spectroscopy; Transistors; Transmission electron microscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915959