Influence of hydrogen, boron, and ion energy on the structure of microcrystalline silicon in plasma-assisted chemical vapor deposition

Author

Oshita, Yuichi ; Okitsu, K. ; Imaizumi, Masayuki ; Yamaguchi, K. ; Yamaguchi, M. ; Hara, T. ; Ito, T. ; Fukushima, H. ; Ryoji, M. ; Fujii, S. ; Kawamura, K.

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

2000

fDate

2000

Firstpage

849

Lastpage

852

Abstract

Si films are deposited by electron beam excited plasma CVD. Microcrystalline Si with no preferential orientation is grown at 300°C from 100% SiH₄ without H₂ dilution. The grain size increases as the substrate temperature increases. The film structure becomes columnar caused by the higher temperature, the B doping, and the decrease of the ion energy. We discuss the influences of the hydrogen injection, the in-situ impurity doping, and the ion energy on the crystalline structures

Keywords

boron; electron beam applications; elemental semiconductors; grain size; hydrogen; impurities; plasma CVD; plasma CVD coatings; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 300 C; B doping; Si films; Si:B; SiH₄; boron doping; columnar film structure; crystalline structures; electron beam excited plasma CVD; grain size; hydrogen; hydrogen injection; in-situ impurity doping; ion energy; microcrystalline silicon; plasma-assisted chemical vapor deposition; substrate temperature; thin film solar cells; Boron; Crystallization; Doping; Electron beams; Grain size; Hydrogen; Impurities; Plasma temperature; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916016

Filename

916016