Title :
The photo-electronic properties of porous Si/C60 junction
Author :
Wen, Ching-ju ; Watanabe, Tadashi ; Takahashi, Hiroshi ; Yamada, Koichi
Author_Institution :
Dept. of Chem. Syst. Eng., Tokyo Univ., Japan
Abstract :
Aiming at utilizing the photo-induced charge transfer characteristics between porous silicon (PS) and C60 for the application of solar cells, our study has been focused on the photo-electronic properties of the PS/C60 junction. We found that the photogenerated electron flow is in the direction from C60 to PS for the PS/C60 junction in which C60 was considered to be inserted into the pores of PS to some extent. This is opposite to the electron flow observed for the junction in which C 60 was deposited only on the PS surface. These results indicate that the direction of the electric field built at the interface between PS and C60 was changed as C60 was inserted in to PS
Keywords :
carbon; charge exchange; electric fields; elemental semiconductors; p-n heterojunctions; porous semiconductors; silicon; solar cells; Si-C60; electric field direction; photo-electronic properties; photo-induced charge transfer characteristics; photogenerated electron flow; porous Si/C60 junction; solar cells; Charge transfer; Current density; Electrodes; Electrons; Gold; Hafnium; Photoluminescence; Photovoltaic cells; Polymers; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916024
