Title :
The effect of SiH4 flow and H2 dilution on hot-wire μc-Si:H and a-Si:H films
Author :
Lee, Jeong Chul ; Kang, Gi Whan ; Kim, Seok Ki ; Yoon, Kyung Hoon ; Song, Jinsoo ; Park, I. Jun
Author_Institution :
Dept. of New & Renewable Energy, Korea Inst. of Energy Res., Taejon, South Korea
Abstract :
The effects of SiH4 flow and H2 dilution on the hot wire silicon films have been studied in this paper. The Si films deposited at low SiH4 flow (1 to 7 sccm) have distinct Raman TO mode peak near 520 cm-1 even at no H2 dilution. The microcrystalline to amorphous phase transition, however, occurred at increased SiH4 flow above than 10 sccm. The added H2 gas does not contribute to the crystallinity improvement of the samples deposited at low SiH4 flow while the amorphous films are crystallized as the high H2 gases are employed. On the contrary, when the deposition time increased, the crystalline properties are greatly improved; crystalline volume fraction reached up to 75% without H2 dilution. The electrical properties and hydrogen bonding configuration as functions of SiH4 flow and different dilution conditions are also discussed in the paper
Keywords :
CVD coatings; Raman spectra; amorphous semiconductors; chemical vapour deposition; crystallisation; elemental semiconductors; hydrogen; hydrogen bonds; semiconductor thin films; silicon; H2 dilution; Si:H; SiH4; SiH4 flow; amorphous films crystallization; crystalline volume fraction; crystallinity; dilution conditions; distinct Raman TO mode peak; electrical properties; hot-wire μc-Si:H films; hot-wire a-Si:H films; hydrogen bonding configuration; microcrystalline to amorphous phase transition; Amorphous materials; Crystallization; Hydrogen; Infrared heating; Optical films; Semiconductor films; Silicon; Substrates; Temperature; Wires;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916028
