DocumentCode
1744371
Title
Low degradation and high annealing effects of amorphous silicon multilayer processed through alternate hydrogen dilution
Author
Jun, Kyung Hoon ; Kwon, Sung Won ; Lim, Koeng Su
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
2000
fDate
2000
Firstpage
924
Lastpage
927
Abstract
Alternately hydrogen diluted a-Si:H multilayer is shown to be a promising concept for the fabrication of stable a-Si:H solar cells or other a-Si:H based devices. The alternately hydrogen diluted amorphous silicon multilayers were obtained by toggling both the H2/SiH 4 dilution ratio and the total flow rate of the gases under continuous UV light irradiation into the reaction chamber of a photo-chemical vapor deposition system. The authors applied these multilayers as the active layer of p-i-n type thin film solar cells. They report on the light-soaking and the annealing behavior of the solar cells. The multilayer solar cell has exceptionally high recovery rate at low temperatures, which makes the solar cell degradation behavior highly sensitive to the cell temperature during degradation
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device measurement; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; H2/SiH4 dilution ratio; Si:H; a-Si:H multilayer solar cells; alternate hydrogen dilution; annealing; continuous UV light irradiation; degradation; hoto-chemical vapor deposition system; light-soaking; p-i-n type thin film solar cells; Amorphous silicon; Annealing; Chemical vapor deposition; Degradation; Fabrication; Gases; Hydrogen; Nonhomogeneous media; Photovoltaic cells; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.916035
Filename
916035
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