DocumentCode :
1744391
Title :
Amorphous silicon based tandem junction thin-film technology: a manufacturing perspective
Author :
Arya, R.R. ; Bennett, M. ; Lin, G. ; Willing, F. ; Newton, J. ; Ganguly, G. ; Liu, S.
Author_Institution :
BP Solar, Toano, VA, USA
fYear :
2000
fDate :
2000
Firstpage :
1433
Lastpage :
1436
Abstract :
BP Solar built a 10 MW capacity thin-film manufacturing plant (TF1) at Toano, Virginia, USA in 1997. This plant is based on a-Si/a-SiGe tandem junction technology. Over the past three years, the plant has made tremendous improvements in throughput and module power while maintaining high yields. The plant has expanded its product line to include modules with power from 5 W to 50 W. The use of the present product-line as a diagnostic tool to address the multi-dimensional challenges of amorphous silicon based alloy process scale-up and transfer is discussed
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; p-n heterojunctions; semiconductor device manufacture; semiconductor thin films; silicon; solar cells; 10 MW; 5 to 50 W; BP Solar; Si-SiGe; USA; a-Si/a-SiGe tandem junction solar cell technology; diagnostic tool; manufacturing perspective; module power; production yield; thin-film manufacturing plant; throughput; Amorphous silicon; Glass; Manufacturing; Production; Semiconductor thin films; Silicon alloys; Sputtering; Substrates; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.916162
Filename :
916162
Link To Document :
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