Title :
Advances in large area CIGS technology
Author :
Delahoy, Alan ; Bruns, Juergen ; Chen, Liangfan ; Akhtar, Masud ; Kiss, Zoltan ; Contreras, Miguel
Author_Institution :
Energy Photovoltaics Inc., Princeton, NJ, USA
Abstract :
This paper describes results in several areas that, taken as a whole, significantly contribute to the advancement of CIGS PV technology based on vacuum deposition. These results include the large area sputtering of Mo suitable for very high efficiency cells, the improved delivery of Cu by linear source evaporation for large area vacuum deposition of CIGS, a promising non-Cd buffer layer capable of vacuum deposition, and improvement of the properties of doped ZnO
Keywords :
copper compounds; indium compounds; semiconductor thin films; solar cells; sputtering; ternary semiconductors; vacuum deposited coatings; vacuum deposition; Cu(In,Ga)Se2 solar cells; Cu(InGa)Se2; Mo large area sputtering; PV technology; ZnO; doped ZnO; large area CIGS technology; large area vacuum deposition; linear source evaporation; non-Cd buffer layer; vacuum deposition; very high efficiency cells; Buffer layers; Coatings; Electrodes; Elementary particle vacuum; Glass; Photovoltaic cells; Sputtering; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916163
