Advances in large area CIGS technology

Author

Delahoy, Alan ; Bruns, Juergen ; Chen, Liangfan ; Akhtar, Masud ; Kiss, Zoltan ; Contreras, Miguel

Author_Institution

Energy Photovoltaics Inc., Princeton, NJ, USA

fYear

2000

fDate

2000

Firstpage

1437

Lastpage

1440

Abstract

This paper describes results in several areas that, taken as a whole, significantly contribute to the advancement of CIGS PV technology based on vacuum deposition. These results include the large area sputtering of Mo suitable for very high efficiency cells, the improved delivery of Cu by linear source evaporation for large area vacuum deposition of CIGS, a promising non-Cd buffer layer capable of vacuum deposition, and improvement of the properties of doped ZnO

Keywords

copper compounds; indium compounds; semiconductor thin films; solar cells; sputtering; ternary semiconductors; vacuum deposited coatings; vacuum deposition; Cu(In,Ga)Se₂ solar cells; Cu(InGa)Se₂; Mo large area sputtering; PV technology; ZnO; doped ZnO; large area CIGS technology; large area vacuum deposition; linear source evaporation; non-Cd buffer layer; vacuum deposition; very high efficiency cells; Buffer layers; Coatings; Electrodes; Elementary particle vacuum; Glass; Photovoltaic cells; Sputtering; Substrates; Temperature; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916163

Filename

916163