Title :
Photothermal stability of encapsulated silicon solar cells and encapsulation materials upon accelerated exposures. II
Author :
Pern, F.J. ; Glick, S.H.
Author_Institution :
Div. of Eng. & Reliability, Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The authors studied the electrical and optical performance stability of crystalline silicon solar cells that were encapsulated with different types of EVA (ethylene vinyl acetate) between a borosilicate glass superstrate and a glass or white TPT (Tedlar/polyester/Tedlar) substrate. Total internal light reflection from the white TPT layer enhanced the measured cell photocurrent by ~20.4% to 23.9% and the efficiency by ~17.4% to 20.8%, with a cell-to-sample area ratio of 23,3%. In comparison, the enhancements on the cell photocurrent were from ~5.0% to 7.0% when the cells were laminated between two borosilicate plates. The samples were exposed under to ~6.5 UV suns at 65°C or heated in an oven at 105°C and periodically characterized for electrical and optical losses. The results show that, when the samples were measured without black-masking over the non-cell areas, the cell efficiency decreased by ~0.3% to 8.9% and the fill factor changed by ~0% to 6.6% after 1133-h exposures. When the non-cell areas were masked, the measured cell efficiency losses became 4.1% to 9.0% and the fill factor losses from 0.5% to 5.2%, respectively. The electrical changes are irregular for the sample cells tested and are not proportional to the optical losses of EVA/TPT bi-layer. As an example, a cell´s efficiency decreased by 8.9%, whereas is NREL-V11 EVA remained clear; and another cell lost 7.1% efficiency, whereas its slow-cure A9918 EVA browned with a 12.2% loss in integrated transmittance and an increase of 31.85 in yellowness index
Keywords :
electric current measurement; elemental semiconductors; encapsulation; semiconductor device measurement; semiconductor device packaging; semiconductor device testing; silicon; solar cells; substrates; thermal stability; voltage measurement; 1133 h; 20.8 percent; 65 C; 8.9 percent; Si; Tedlar/polyester/Tedlar substrate; accelerated exposure; borosilicate glass superstrate; encapsulated silicon solar cells; encapsulation materials; ethylene vinyl acetate; photothermal stability; total internal light reflection; Area measurement; Crystallization; Glass; Optical losses; Optical reflection; Photoconductivity; Photovoltaic cells; Silicon; Stability; Sun;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916176