Title :
Quantum hydrodynamic equations with quantum corrected potential [RTD simulation]
Author :
Hosseini, S.E. ; Faez, R.
Author_Institution :
Sharif Univ. of Technol., Tehran, Iran
Abstract :
In this article, we derive moment expansion of the Boltzman transport equation (BTE) using a distribution function which includes quantum effects. The resulting quantum hydrodynamic (QHD) equations are similar to the classical hydrodynamic (HD) equations, but some terms are added which are the result of the quantum effects. The quantum correction terms have better behavior in response to potential discontinuities than the O(h2) approximation. The derived equations are used for simulation of resonant tunneling diode (RTD). The results show a negative resistance region in the I-V curve of the diode for the cases where O(h2) equations could not show this phenomenon
Keywords :
Boltzmann equation; hydrodynamics; negative resistance; resonant tunnelling; resonant tunnelling diodes; semiconductor device models; Boltzman transport equation; O(h2) approximation; QHD equations; RTD I-V curve; RTD simulation; classical hydrodynamic equations; distribution function; moment expansion; negative resistance region; potential discontinuities; quantum corrected potential; quantum correction terms; quantum effects; quantum hydrodynamic equations; resonant tunneling diode; Diodes; Distribution functions; Fabrication; Hydrodynamics; Modems; Nanoscale devices; Resonant tunneling devices; Schrodinger equation; Thermodynamics; Wires;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916442
