DocumentCode :
1744591
Title :
Minimisation of wiring inductance in high power IGBT inverter
Author :
Lounis, Z. ; Rasoanarivo, Ignace ; Davat, B.
Author_Institution :
CNRS UPRESA, Inst. Nat. Polytech. de Lorraine, Vandoeuvre-les-Nancy, France
Volume :
2
fYear :
2001
fDate :
2001
Abstract :
Summary form only given as follows. The wiring inductance is one of the main causes limiting the use of the inverter, in hard commutation mode, particularly when voltage, current and switching frequency are increased. The busbar technology is the means that allows low wiring inductance between DC source and power switches to be reached in spite of relatively long connections. This paper deals with studies of busbar structure applied to the high power inverters in order to improve their performances. Two structures of wiring are tested; the traditional and and busbar technology. The experimental and simulation results show that this last technique permits very low wiring inductance to be obtained so that no snubber circuits are needed
Keywords :
busbars; commutation; inductance; insulated gate bipolar transistors; invertors; wiring; DC source; busbar technology; current; hard commutation mode; high power IGBT inverter; overvoltage; power switches; relatively long connections; switching frequency; voltage; wiring inductance minimisation; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Inverters; Minimization; Snubbers; Switching frequency; Voltage; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Engineering Society Winter Meeting, 2001. IEEE
Conference_Location :
Columbus, OH
Print_ISBN :
0-7803-6672-7
Type :
conf
DOI :
10.1109/PESW.2001.916981
Filename :
916981
Link To Document :
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