Title :
Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers
Author :
Caddemi, A. ; Donato, N. ; Sannino, M.
Author_Institution :
Dipartimento di Fisica della Mater. e Tecnolgie Fisiche Avanzate, Messina Univ., Italy
Abstract :
The present paper focuses on the small-signal and noise characterization of microwave transistors and circuits at temperatures ranging from 290 to 90 K, in the 6-18 GHz frequency band. We here report on the measurement procedure adopted and the relevant experimental results, including also detailed linear circuit modeling to determine the temperature dependence of basic physical parameters of the tested pseudomorphic HEMT´s. We have already worked at moderately low temperatures (down to 220 K) on either packaged and on wafer microwave transistors and present results at lower temperatures confirm what has been previously found
Keywords :
cryogenic electronics; high electron mobility transistors; microwave field effect transistors; microwave receivers; semiconductor device models; semiconductor device noise; 6 to 18 GHz; 90 to 290 K; cryogenic temperature; linear circuit model; microwave circuit; microwave receiver; microwave transistor; noise measurement; pseudomorphic HEMT; sensitivity; small-signal characteristics; temperature dependence; Circuit noise; Circuit testing; Cryogenics; Frequency; Linear circuits; Microwave circuits; Microwave devices; Microwave transistors; Semiconductor device modeling; Temperature distribution;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919036
