Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers

Author

Caddemi, A. ; Donato, N. ; Sannino, M.

Author_Institution

Dipartimento di Fisica della Mater. e Tecnolgie Fisiche Avanzate, Messina Univ., Italy

fYear

2000

fDate

2000

Firstpage

89

Lastpage

94

Abstract

The present paper focuses on the small-signal and noise characterization of microwave transistors and circuits at temperatures ranging from 290 to 90 K, in the 6-18 GHz frequency band. We here report on the measurement procedure adopted and the relevant experimental results, including also detailed linear circuit modeling to determine the temperature dependence of basic physical parameters of the tested pseudomorphic HEMT´s. We have already worked at moderately low temperatures (down to 220 K) on either packaged and on wafer microwave transistors and present results at lower temperatures confirm what has been previously found

Keywords

cryogenic electronics; high electron mobility transistors; microwave field effect transistors; microwave receivers; semiconductor device models; semiconductor device noise; 6 to 18 GHz; 90 to 290 K; cryogenic temperature; linear circuit model; microwave circuit; microwave receiver; microwave transistor; noise measurement; pseudomorphic HEMT; sensitivity; small-signal characteristics; temperature dependence; Circuit noise; Circuit testing; Cryogenics; Frequency; Linear circuits; Microwave circuits; Microwave devices; Microwave transistors; Semiconductor device modeling; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919036

Filename

919036