DocumentCode
1744979
Title
A methodology for constructing two-transistor multistable circuits
Author
Shou, X. ; Goldgeisser, L.B. ; Green, M.M.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
Volume
3
fYear
2001
fDate
6-9 May 2001
Firstpage
377
Abstract
This paper analyzes the nonlinearities in two-transistor circuits that give rise to the existence of multiple operating points. Techniques for constructing circuits, using both MOS and bipolar transistors, that possess five operating points (3 of which are stable) are presented. For the first time, a two-BJT circuit that possesses five operating points is reported. It clearly disproves the claim that two-transistor circuits cannot possess more than three operating points
Keywords
MOSFET circuits; bipolar transistor circuits; circuit bistability; nonlinear network synthesis; MOS transistors; MOSFET latch; bipolar transistors; multiple operating points; two-BJT circuit; two-transistor circuit nonlinearities; two-transistor multistable circuit construction methodology; Bipolar transistor circuits; Bipolar transistors; CMOS technology; History; Latches; MOSFETs; Measurement standards; Nonlinear circuits; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6685-9
Type
conf
DOI
10.1109/ISCAS.2001.921326
Filename
921326
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