Title :
A simulated LC oscillator using multi-input floating-gate MOSFETS
Author :
Matsuda, Kinya ; Horio, Yoshihiko ; Aihara, Kazuyuki
Author_Institution :
Tokyo Denki Univ., Japan
Abstract :
A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with Λ-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 μm CMOS process. The preliminary experimental results from the chip are shown
Keywords :
CMOS analogue integrated circuits; circuit simulation; equivalent circuits; negative resistance circuits; nonlinear network analysis; voltage-controlled oscillators; 0.35 micron; I-V characteristic; MOSIS TSMC; equivalent inductor circuit; external voltage; multi-input floating-gate MOSFETS; negative resistance; nonlinear resistor circuit; oscillation frequency; parasitic capacitances; simulated LC oscillator; CMOS process; Circuit simulation; Frequency; Inductance; Inductors; MOSFETs; Oscillators; Parasitic capacitance; Resistors; Voltage control;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921444