A simulated LC oscillator using multi-input floating-gate MOSFETS

Author

Matsuda, Kinya ; Horio, Yoshihiko ; Aihara, Kazuyuki

Author_Institution

Tokyo Denki Univ., Japan

Volume

3

fYear

2001

fDate

6-9 May 2001

Firstpage

763

Abstract

A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with Λ-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 μm CMOS process. The preliminary experimental results from the chip are shown

Keywords

CMOS analogue integrated circuits; circuit simulation; equivalent circuits; negative resistance circuits; nonlinear network analysis; voltage-controlled oscillators; 0.35 micron; I-V characteristic; MOSIS TSMC; equivalent inductor circuit; external voltage; multi-input floating-gate MOSFETS; negative resistance; nonlinear resistor circuit; oscillation frequency; parasitic capacitances; simulated LC oscillator; CMOS process; Circuit simulation; Frequency; Inductance; Inductors; MOSFETs; Oscillators; Parasitic capacitance; Resistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921444

Filename

921444