A 1.5-V CMOS fully differential inductorless RF bandpass amplifier

Author

Thanachayanont, Apintint

Author_Institution

Dept. of Electron. Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

1

fYear

2001

fDate

6-9 May 2001

Firstpage

49

Abstract

This paper presents the design of a 1.5 V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 μm n-well CMOS technology. The bandpass amplifier employs a novel low-voltage floating active inductor as the tuned load. HSPICE simulation of the proposed bandpass amplifier operating at 1 GHz centre frequency and a quality factor of 50 illustrates that a 50 dB voltage gain and a 4.2 dB noise figure can be achieved with the total power dissipation of 46 mW under a 1.5 V power supply voltage

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; active networks; circuit tuning; differential amplifiers; 0.35 micron; 1 GHz; 1.5 V; 4.2 dB; 46 mW; 50 dB; CMOS bandpass amplifier; HSPICE simulation; LV floating active inductor; fully differential bandpass amplifier; inductorless RF bandpass amplifier; low-voltage active inductor; n-well CMOS technology; quality factor; tuned load; Active inductors; CMOS technology; Differential amplifiers; Gain; Noise figure; Power amplifiers; Q factor; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921785

Filename

921785