MOSGRAD-a tool for simulating the effects of systematic and random channel parameter variations

Author

Lan, Mao-Feng ; Geiger, Randall

Author_Institution

Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

1

fYear

2001

fDate

6-9 May 2001

Firstpage

89

Abstract

A CAD tool, MOSGRAD, that can be used to simulate the effects of distributed two-dimensional systematic and random variations in device parameters on the performance of matching-critical circuits has been developed. In addition to applications for layouts with conventional rectangular transistors, this tool can predict the performance of nonconventional circuit structures in which multiple drain and/or source regions share a common channel region as well as predict the performance of nonconventional layouts that may incorporate nonrectangular transistors or segmented transistors

Keywords

CMOS integrated circuits; MOS integrated circuits; MOSFET; circuit layout CAD; circuit simulation; integrated circuit layout; semiconductor device models; CAD tool; MOSFETs; MOSGRAD; common channel region; device parameters; distributed two-dimensional systematic variations; matching-critical circuits; multiple drain regions; multiple source regions; nonconventional circuit structures; nonconventional layouts; nonrectangular transistors; random channel parameter variations; rectangular transistors; segmented transistors; Application software; Circuit optimization; Circuit simulation; Computational modeling; MOSFETs; Mirrors; Predictive models; Random variables; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921795

Filename

921795