Title :
A high-efficiency CMOS charge pump circuit
Author :
Lai, Sheng-Yeh ; Wang, Jinn-Shyan
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Cheng Univ., Chia-Yi, Taiwan
Abstract :
A new high-efficiency CMOS charge pump circuit is proposed in this paper. By using two specially designed auxiliary pump circuits, the impact of the threshold drop and the body effect on the main pump circuit can be suppressed significantly. Simulation results show the pumping efficiency of the new circuit is superior to all the conventional circuits
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; leakage currents; low-power electronics; CMOS charge pump circuit; VLSI; auxiliary pump circuits; body effect; efficiency; low-power electronics; pumping efficiency; threshold drop; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Low voltage; MOS devices; MOSFETs; Parasitic capacitance; Switches;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.922259
