Title :
A 2.3 V low noise, low power, 10 GHz bandwidth Si-bipolar transimpedance preamplifier for optical receiver front-ends
Author :
Lu, Ye ; El-Gama, Mourad N.
Author_Institution :
Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
Abstract :
A low-noise, low power Si-bipolar transimpedance preamplifier for optical-fibre receivers is presented. Design specifications are met in the form of trade-offs between input noise current, speed, transimpedance gain, power dissipation, impedance matching, and supply voltage. This preamplifier, designed in a 0.5 μm 25 GHz self-aligned double poly silicon bipolar process, is expected to exhibit 8pA/√Hz input noise current, 10 GHz bandwidth, and 43 dB transimpedance gain, while dissipating only 9 mW from a single supply voltage of 2.3 V
Keywords :
bipolar analogue integrated circuits; elemental semiconductors; integrated circuit noise; low-power electronics; optical receivers; preamplifiers; silicon; 0.25 micron; 10 GHz; 2.3 V; 25 GHz; 43 dB; 9 mW; Si; bandwidth; high-speed optical communication system; impedance matching; input noise current; low-noise low-power transimpedance preamplifier; optical fibre receiver front-end; power dissipation; self-aligned double polysilicon bipolar process; transimpedance gain; Bandwidth; Circuit topology; High speed optical techniques; Low voltage; Optical amplifiers; Optical noise; Optical receivers; Optical sensors; Preamplifiers; Signal to noise ratio;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.922367
