A fully integrated 1 V 5.8 GHz bipolar LNA

Author

Tsang, Tommy K K ; El-Gamal, Mourad N.

Author_Institution

Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

Volume

4

fYear

2001

fDate

6-9 May 2001

Firstpage

842

Abstract

This paper describes a low voltage low noise amplifier design in a 0.5 μm bipolar process, targeting a center frequency of 5.8 GHz with a voltage supply of 1 V. The forward transmission S₂₁ is 11.5 dB at a low power consumption of 6.6 mW, including all biasing circuitry. The overall noise figure of the LNA is 4 dB with both input and output impedances matched to 50 ohm. The circuit uses no off-chip components, such as bonding wires and biasing-tees, which makes it suitable for robust integration

Keywords

MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; integrated circuit design; integrated circuit noise; low-power electronics; 0.5 micron; 1 V; 4 dB; 5.8 GHz; 6.6 mW; biasing circuitry; bipolar LNA; center frequency; forward transmission; input impedances; low noise amplifier design; output impedances; overall noise figure; robust integration; voltage supply; Bonding; Circuits; Energy consumption; Frequency; Impedance matching; Low voltage; Low-noise amplifiers; Noise figure; Noise robustness; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.922369

Filename

922369