A fast self-convergent flash-memory programming scheme for MV and analog data storage

Author

Yamasaki, T. ; Suzuki, A. ; Kobayashi, D. ; Shibata, T.

Author_Institution

Dept. of Inf. & Commun. Eng., Tokyo Univ., Japan

Volume

4

fYear

2001

fDate

6-9 May 2001

Firstpage

930

Abstract

A fast self-convergent programming scheme has been developed for MV/analog data storage in floating-gate MOS memories. In the scheme, the built-in feedback mechanism of the channel hot electron injection phenomenon is used for fast and accurate data writing, As a result, 4-bit-resolution writing can be achieved in less than 10 μs without write/verify cycles. In addition, a new dual-transistor memory cell is proposed to enable more accurate analog data writing by real-time monitoring during data writing

Keywords

MOS analogue integrated circuits; analogue storage; circuit feedback; flash memories; hot carriers; 10 mus; 4-bit-resolution writing; analog data storage; built-in feedback mechanism; channel hot electron injection phenomenon; data writing; dual-transistor memory cell; floating-gate MOS memories; multivalue memory; real-time monitoring; self-convergent flash-memory programming scheme; Channel hot electron injection; Computational intelligence; Data engineering; Flash memory; Informatics; MOSFETs; Monitoring; Nonvolatile memory; Voltage control; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.922391

Filename

922391