DocumentCode :
1745361
Title :
Non-reciprocal SAW devices for RF applications
Author :
Rotter, M. ; Ruile, W. ; Wixforth, A.
Author_Institution :
Corp. Technol., Siemens AG, Munchen, Germany
Volume :
1
fYear :
2000
fDate :
36800
Firstpage :
35
Abstract :
The combination of the electronic properties of a semiconductor heterostructure and the acoustic properties of strongly piezoelectric crystals yields promising hybrids for potential acousto electric applications. The nonlinear interaction between an intense SAW on a LiNbO3 substrate and the free carriers in a semiconductor quantum well can be exploited to result in strongly non-reciprocal devices for RF applications
Keywords :
semiconductor quantum wells; semiconductor thin films; surface acoustic wave signal processing; LiNbO3; LiNbO3 substrate; RF signal processing applications; free carriers; intense SAW; nonlinear interaction; nonreciprocal SAW devices; piezoelectric crystals; semiconductor heterostructure; semiconductor quantum well; Boundary conditions; Conductivity; Electrodes; Electrons; Molecular beam epitaxial growth; Radio frequency; Substrates; Surface acoustic wave devices; Surface acoustic waves; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
ISSN :
1051-0117
Print_ISBN :
0-7803-6365-5
Type :
conf
DOI :
10.1109/ULTSYM.2000.922501
Filename :
922501
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1745361
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