• DocumentCode
    1745361
  • Title

    Non-reciprocal SAW devices for RF applications

  • Author

    Rotter, M. ; Ruile, W. ; Wixforth, A.

  • Author_Institution
    Corp. Technol., Siemens AG, Munchen, Germany
  • Volume
    1
  • fYear
    2000
  • fDate
    36800
  • Firstpage
    35
  • Abstract
    The combination of the electronic properties of a semiconductor heterostructure and the acoustic properties of strongly piezoelectric crystals yields promising hybrids for potential acousto electric applications. The nonlinear interaction between an intense SAW on a LiNbO3 substrate and the free carriers in a semiconductor quantum well can be exploited to result in strongly non-reciprocal devices for RF applications
  • Keywords
    semiconductor quantum wells; semiconductor thin films; surface acoustic wave signal processing; LiNbO3; LiNbO3 substrate; RF signal processing applications; free carriers; intense SAW; nonlinear interaction; nonreciprocal SAW devices; piezoelectric crystals; semiconductor heterostructure; semiconductor quantum well; Boundary conditions; Conductivity; Electrodes; Electrons; Molecular beam epitaxial growth; Radio frequency; Substrates; Surface acoustic wave devices; Surface acoustic waves; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2000 IEEE
  • Conference_Location
    San Juan
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-6365-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2000.922501
  • Filename
    922501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1745361