SAW-semiconductor coupled device with stripe shaped semiconductor films

Author

Koh, K. ; Suda, T. ; Aoki, Y. ; Hong, C. ; Kaneshiro, C. ; Hohkawa, K.

Author_Institution

Kanagawa Inst. of Technol., Japan

Volume

1

fYear

2000

fDate

36800

Firstpage

47

Abstract

In this paper, we proposed the epitaxial lift-off (ELO) process of stripe GaAs film using polyimide film for realization of mass production technology of ELO film bonding. In order to develop new SAW-semiconductor coupled devices, we carried out experiments and investigated the basic characteristics of the interaction between SAW and carriers in a stripe film when it is illuminated by light. The experimental results indicate that the stripe structure is effective for reducing the attenuation of SAW device. We also proposed some functional devices with the stripe shaped semiconductor film

Keywords

III-V semiconductors; gallium arsenide; semiconductor technology; semiconductor thin films; surface acoustic wave devices; ELO film bonding; GaAs; SAW-semiconductor coupled device; SAW/carriers interaction; attenuation reduction; epitaxial liftoff process; functional devices; mass production technology; polyimide film; stripe GaAs film; stripe shaped semiconductor films; Bonding; Gallium arsenide; Mass production; Piezoelectric films; Polyimides; Semiconductor films; Stress; Substrates; Surface acoustic wave devices; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2000 IEEE

Conference_Location

San Juan

ISSN

1051-0117

Print_ISBN

0-7803-6365-5

Type

conf

DOI

10.1109/ULTSYM.2000.922504

Filename

922504