Title :
Acoustoelastic effect in stressed heterostructures
Author :
Osetrov, A.V. ; Forhlich, H.-J. ; Koch, R. ; Chilla, E.
Author_Institution :
Paul Drude Inst. for Solid State Electron., Berlin, Germany
Abstract :
Mechanical stresses influence the phase velocity of acoustic waves, known as AE (acoustoelastic) effect. In order to calculate the AE effect of biaxially stressed layered systems we extended the transfer matrix method for acoustic wave propagation by considering the change of the density, the influence of residual stress, and the modification of the elastic stiffness tensor by residual strain and by third-order constants. The generalized method is applied to the calculation of the angular dispersion of the AE effect for transverse bulk modes and surface acoustic waves on Ge(001). Our calculations reveal that the AE effect is significantly depended on the propagation direction and can even change sign. The maximum velocity change occurs for transversally polarized waves propagating parallel to the [110] direction. For the layered Ge/Si(001) system the AE effect is investigated for Love modes propagating in the [100] and [110] directions. The AE effect increases rapidly with increasing layer thickness and reaches almost its maximum value when the wave is still penetrating into the unstressed substrate. For higher order Love modes the increase of the AE effect is even steeper and furthermore can reach higher values
Keywords :
Love waves; acoustic wave velocity; elasticity; elemental semiconductors; germanium; internal stresses; semiconductor heterojunctions; silicon; surface acoustic waves; Ge; Ge-Si; Love mode; acoustic wave phase velocity; acoustoelastic effect; angular dispersion; biaxial mechanical stress; density; elastic stiffness tensor; residual strain; residual stress; surface acoustic wave; third-order constants; transfer matrix method; transverse bulk mode; Acoustic materials; Acoustic propagation; Acoustic waves; Capacitive sensors; Compressive stress; Lattices; Residual stresses; Substrates; Surface acoustic waves; Tensile stress;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan, Puerto Rico, USA
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922608