DocumentCode
1745488
Title
Micromachined ultrasonic transducers using silicon nitride membrane fabricated in PECVD technology
Author
Caliano, G. ; Galanello, F. ; Caronti, A. ; Carotenuto, R. ; Pappalardo, M. ; Foglietti, V. ; Lamberti, N.
Author_Institution
Dipartimento di Ingegneria Elettronica, Rome Univ., Italy
Volume
1
fYear
2000
fDate
36800
Firstpage
963
Abstract
Capacitive ultrasonic transducers, consisting of thin membranes scratched over a conducting backplate, offer many advantages compared to piezoelectric transducers, such as low impedance mismatch, low energy density and low cost. Recent developments in microfabrication technology have spurred novel design for transducers in the ultrasonic range both for air and water applications. In this paper we report the fabrication process of transducers using PECVD deposition technology. With this process it is possible to change the stress from compressive to tensile, varying the temperature and time parameters. The resulting film is of very good quality and experiences irreversible modification after annealing process which prevents changes at lower temperature. Using this technology we succeeded in fabricating transducers with 3.8 MHz resonant frequency in air
Keywords
annealing; internal stresses; membranes; micromachining; plasma CVD; silicon compounds; ultrasonic transducers; PECVD technology; SiN; annealing; capacitive ultrasonic transducers; conducting backplate; design; fabrication process; low cost; low energy density; low impedance mismatch; microfabrication technology; micromachined ultrasonic transducers; silicon nitride membrane; stress; time parameters; Biomembranes; Compressive stress; Costs; Fabrication; Impedance; Piezoelectric transducers; Silicon; Temperature; Tensile stress; Ultrasonic transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2000 IEEE
Conference_Location
San Juan
ISSN
1051-0117
Print_ISBN
0-7803-6365-5
Type
conf
DOI
10.1109/ULTSYM.2000.922701
Filename
922701
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