Electrical activation of B implanted in silicon at energies below 1 keV

Author

Privitera, V. ; Napolitani, E. ; Priolo, F. ; Mannino, G. ; Settanni, G. ; Camalleri, M. ; Rimini, E.

Author_Institution

Istituto di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy

fYear

2000

fDate

2000

Firstpage

58

Lastpage

61

Abstract

An extensive characterization by Spreading Resistance Profiling of the electrical activation of ultra-low energy implanted boron in silicon is reported. The study of the dependence on the implant energy, dose and annealing temperature throws light on the mechanisms responsible for the electrical activation at implant energies below 1 keV. The thermal activation energy for the electrical activation of boron slightly depends on the implant dose and is in the range of 2-3 eV. The implication of these data for the fabrication of future generation devices is discussed

Keywords

boron; electrical conductivity; elemental semiconductors; ion implantation; semiconductor doping; silicon; 1 keV; 2 to 3 eV; Si:B; Spreading Resistance Profiling; annealing temperature; dose; electrical activation; implant energy; thermal activation energy; ultra-low energy implanted Si:B; Annealing; Boron; Doping; Electric variables measurement; Implants; Impurities; Ion implantation; Probes; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924089

Filename

924089