Smart-Cut(R) process: an original way to obtain thin films by ion implantation

Author

Aspar, B. ; Lagahe, C. ; Moriceau, H. ; Soubie, A. ; Jalaguier, E. ; Biasse, B. ; Papon, A. ; Chabli, A. ; Claverie, A. ; Grisolia, J. ; BenAssayag, G. ; Barge, T. ; Letertre, F. ; Ghyselen, B.

Author_Institution

Dept. de Microtechnol. et Microelectron., CEA-LETI, Grenoble, France

fYear

2000

fDate

2000

Firstpage

255

Lastpage

260

Abstract

The Smart-Cut(R) process, based on proton implantation and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally induced splitting. Cavity growth by Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splitting kinetics are controlled by hydrogen diffusion. In the second part, the latest results concerning new structures are presented

Keywords

diffusion; elemental semiconductors; hydrogen; ion implantation; proton effects; segregation; semiconductor thin films; silicon; voids (solid); wafer bonding; Ostwald ripening mechanism; Si:H; Smart-Cut process; cavity growth; crack propagation; generic process; hydrogen diffusion; ion implantation; proton implantation; thermally induced splitting; thin films; wafer bonding; Hydrogen; Infrared spectra; Ion implantation; Power generation economics; Protons; Silicon on insulator technology; Substrates; Surface treatment; Tin; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924138

Filename

924138