DocumentCode :
1745596
Title :
Enhancing B+ ion current by adding MgO to the chamber material of a microwave ion source
Author :
Sakudo, Noriyuki ; Ito, Hiroyuki ; Ito, Seiichi ; Matsunaga, Yasuhiko ; Hayashi, Keiji ; Nishiyama, Yoko ; Miyamoto, Atsushi ; Yutani, Masatoshi ; Komatsu, Kazuhiro
Author_Institution :
Kanazawa Inst. of Technol., Ishikawa, Japan
fYear :
2000
fDate :
2000
Firstpage :
520
Lastpage :
523
Abstract :
It is experimentally shown that increasing the electron-emission coefficient of the chamber material can enhance B+ ion current from a microwave ion source. The plasma potential dependence on the coefficient is theoretically studied. As the preliminary test, the potential differences between the chamber wall and a test surface with different coefficient of the electron emission and it is proved that the potential is lowered by coating MgO on the test surface. Then we tested some chambers with different amounts of MgO added to by installing them in the microwave ion source, which was mounted on a commercial beam line of Applied Materials xR80. The result obtained so far shows that B+ ion current is considerably enhanced with the chamber of 5% MgO
Keywords :
ion sources; plasma density; secondary electron emission; B; B+ ion current; MgO; MgO coating; electron-emission coefficient; microwave ion source; plasma potential; Coatings; Electron emission; Ion sources; Plasma accelerators; Plasma applications; Plasma density; Plasma materials processing; Plasma sheaths; Plasma sources; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
Type :
conf
DOI :
10.1109/.2000.924202
Filename :
924202
Link To Document :
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