DLTS Analyses of GaN p-i-n Diodes Grown on Conventional and Patterned Sapphire Substrates

Author

Wei-Ju Wang ; Chien-Lan Liao ; Yung-Fu Chang ; Yueh-Lin Lee ; Chong-Long Ho ; Meng-Chyi Wu

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1376

Lastpage

1378

Abstract

In this letter, we report the electrical characteristics of current-voltage, capacitance-voltage, and deep-level transient spectroscopy on the GaN p-i-n diodes with a 5- μm i-layer, which were grown on the conventional sapphire substrates (CSSs) and patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. The GaN p-i-n diodes with PSS exhibit a wider diffusion region in the forward bias, two traps at 0.43 and 0.87 eV above the valence band, and a low trap concentration of ~ 5×10¹⁶ cm^-3, as compared with the GaN p-i-n diodes with CSS. These results show that the GaN p-i-n diodes grown on PSS have a better quality of epitaxial layers than those grown on CSS.

Keywords

III-V semiconductors; MOCVD; deep level transient spectroscopy; diffusion; gallium compounds; p-i-n diodes; sapphire; substrates; wide band gap semiconductors; Al₂O₃; DLTS analyses; GaN; GaN p-i-n diodes; capacitance-voltage characteristics; conventional sapphire substrates; current-voltage characteristics; deep-level transient spectroscopy; diffusion region; electrical characteristics; epitaxial layers; forward bias; metal-organic chemical vapor deposition; patterned sapphire substrates; size 5 mum; trap concentration; valence band; Cascading style sheets; Current density; Epitaxial growth; Epitaxial layers; Gallium nitride; P-i-n diodes; Substrates; Conventional sapphire substrates; GaN; deep-level transient spectroscopy (DLTS); p-i-n diode; patterned sapphire substrate (PSS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2281456

Filename

6605515