Title :
A gain-variable Ka-band SSPA using MMIC technology
Author :
Uhm, Man-Seok ; Jang, Dong-Pil ; Yom, In-Bok ; Lee, Seong-Pal
Author_Institution :
Satellite Commun. Syst. Dept., ETRI-Radio & Broadcasting Technol. Lab., Taejon, South Korea
Abstract :
This paper presents a gain-variable Ka-band 6 W SSPA using MMIC chips fabricated by 0.15 μm GaAs HEMT technology and the design results of an SSPA with improved performance. The SSPA consists of a driver amplifier (DRA) module, high power amplifier (HPA) modules, power dividers and power combiners. The SSPA, being operated on a panel with a heat pipe, achieves a linear gain of 56.1 dB, output power of 37.78 dBm (6 Watts, typical), PAE of 5.9% and an associated gain of 48.1 dB in the frequency from 20.655 GHz to 20.855 GHz. In addition the updated SSPA is designed to have 58.16 dB as the linear gain, 43.15 dBm (20.7 W) as the saturation power and 17.3% as the PAE using newly fabricated 2 W HPA MMICs
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gain control; gallium arsenide; microwave power amplifiers; modules; power combiners; power dividers; 0.15 micron; 17.3 percent; 2 W; 20.655 to 20.855 GHz; 20.7 W; 48.1 to 58.16 dB; 5.9 percent; 6 W; GaAs; GaAs HEMT technology; Ka-band solid-state power amplifier; MMIC technology; SHF; driver amplifier module; gain-variable Ka-band SSPA; heat pipe; high power amplifier modules; power combiners; power dividers; Cogeneration; Driver circuits; Gain; Gallium arsenide; HEMTs; High power amplifiers; MMICs; Power combiners; Power dividers; Power generation;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925910
