Title :
A Ka-band ultra-compact low-noise MMIC amplifier
Author :
Fujimoto, S. ; Katoh, T. ; Ishida, T. ; Oku, T. ; Ishikawa, T. ; Sakamoto, S. ; Mitsui, Y.
Author_Institution :
MMIC Group, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A Ka-band ultra-compact low-noise MMIC two-stage amplifier has been designed and fabricated using 0.15 μm gate AlGaAs/InGaAs pseudomorphic HEMTs. To realize both low-noise performance and small chip size, circuit element parameters were successfully optimized and close-set layout design was introduced into the chip layout pattern. The experimental results showed that the IC exhibits a low-noise figure of less than 2.2 dB and an associated gain of over 12.5 dB from 33 to 40 GHz. The chip size of 0.6 mm2, which includes all matching circuits and bonding pads, is extremely small, compared to conventional MMICs
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; 0.15 micron; 12.5 dB; 2.2 dB; 33 to 40 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs pseudomorphic HEMT; Ka-band ultra-compact low-noise MMIC two-stage amplifier; chip layout; design optimization; Circuits; Costs; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Optical amplifiers; PHEMTs; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925915
