A Ka-band ultra-compact low-noise MMIC amplifier

Author

Fujimoto, S. ; Katoh, T. ; Ishida, T. ; Oku, T. ; Ishikawa, T. ; Sakamoto, S. ; Mitsui, Y.

Author_Institution

MMIC Group, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2000

fDate

2000

Firstpage

638

Lastpage

641

Abstract

A Ka-band ultra-compact low-noise MMIC two-stage amplifier has been designed and fabricated using 0.15 μm gate AlGaAs/InGaAs pseudomorphic HEMTs. To realize both low-noise performance and small chip size, circuit element parameters were successfully optimized and close-set layout design was introduced into the chip layout pattern. The experimental results showed that the IC exhibits a low-noise figure of less than 2.2 dB and an associated gain of over 12.5 dB from 33 to 40 GHz. The chip size of 0.6 mm², which includes all matching circuits and bonding pads, is extremely small, compared to conventional MMICs

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; 0.15 micron; 12.5 dB; 2.2 dB; 33 to 40 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs pseudomorphic HEMT; Ka-band ultra-compact low-noise MMIC two-stage amplifier; chip layout; design optimization; Circuits; Costs; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Optical amplifiers; PHEMTs; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925915

Filename

925915