Title :
Alpha owned PHEMT model and its verification by load-pull and waveform measurements
Author :
Wei, C.J. ; Tkachenko, Y.A. ; Bartle, D.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
Alpha-owned PHEMT model (AOPM) is presented which takes into account high-order derivative fitting in I-V curves, charge-conservation, dispersion/self-heating, and gate current caused by different mechanisms. In order to assess the accuracy of the model, verification has been performed based on complex fundamental and harmonic load-pull behaviour and the device voltage and current waveform. The simulated results are in excellent agreement with the measured data. It is, therefore, important to satisfy all the discussed useful criteria in building an accurate device model to predict adequate power performance for optimum power amplifier design
Keywords :
high electron mobility transistors; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; semiconductor device models; thermal analysis; Alpha owned PHEMT model; I-V curves; accurate device model; charge-conservation; complex fundamental load-pull behaviour; device current waveform; device voltage waveform; gate current; harmonic load-pull behaviour; high-order derivative fitting; load-pull measurements; model accuracy assessment; model verification; optimum power amplifier design; power performance prediction; pseudomorphic HEMT model; self-heating effect; waveform measurements; Curve fitting; Equations; Feedforward systems; Heating; Load modeling; PHEMTs; Power amplifiers; Power system modeling; Voltage; Wireless communication;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925968
