Alpha owned PHEMT model and its verification by load-pull and waveform measurements

Author

Wei, C.J. ; Tkachenko, Y.A. ; Bartle, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

fYear

2000

fDate

2000

Firstpage

871

Lastpage

874

Abstract

Alpha-owned PHEMT model (AOPM) is presented which takes into account high-order derivative fitting in I-V curves, charge-conservation, dispersion/self-heating, and gate current caused by different mechanisms. In order to assess the accuracy of the model, verification has been performed based on complex fundamental and harmonic load-pull behaviour and the device voltage and current waveform. The simulated results are in excellent agreement with the measured data. It is, therefore, important to satisfy all the discussed useful criteria in building an accurate device model to predict adequate power performance for optimum power amplifier design

Keywords

high electron mobility transistors; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; semiconductor device models; thermal analysis; Alpha owned PHEMT model; I-V curves; accurate device model; charge-conservation; complex fundamental load-pull behaviour; device current waveform; device voltage waveform; gate current; harmonic load-pull behaviour; high-order derivative fitting; load-pull measurements; model accuracy assessment; model verification; optimum power amplifier design; power performance prediction; pseudomorphic HEMT model; self-heating effect; waveform measurements; Curve fitting; Equations; Feedforward systems; Heating; Load modeling; PHEMTs; Power amplifiers; Power system modeling; Voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925968

Filename

925968