Title :
3D-Wiz: A novel high bandwidth, optically interfaced 3D DRAM architecture with reduced random access time
Author :
Thakkar, Ishan G. ; Pasricha, Sudeep
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
This paper introduces 3D-Wiz, which is a high bandwidth, low latency, optically interfaced 3D DRAM architecture with fine grained data organization and activation. 3D-Wiz integrates sub-bank level 3D partitioning of the data array to enable fine-grained activation and greater memory parallelism. A novel method of routing the internal memory bus using TSVs and fan-out buffers enables 3D-Wiz to use smaller dimension subarrays without significant area overhead. This in turn reduces the random access latency and activation-precharge energy. 3D-Wiz demonstrates access latency of 19.5ns and row cycle time of 25ns. It yields per access activation energy and precharge energy of 0.78nJ and 0.62nJ respectively with 42.5% area efficiency. 3D-Wiz yields the best latency and energy consumption values per access among other well-known 3D DRAM architectures. Experimental results with PARSEC benchmarks indicate that 3D-Wiz achieves 38.8% improvement in performance, 81.1% reduction in power consumption, and 77.1% reduction in energy-delay product (EDP) on average over 3D DRAM architectures from prior work.
Keywords :
DRAM chips; three-dimensional integrated circuits; 3D-Wiz; EDP; PARSEC benchmarks; TSV; access activation energy; activation-precharge energy; dimension subarrays; efficiency 42.5 percent; energy consumption value; energy-delay product; fan-out buffers; fine-grained data organization; high-bandwidth 3D DRAM architecture; internal memory bus routing; low-latency 3D DRAM architecture; memory parallelism; optically-interfaced 3D DRAM architecture; precharge energy; random access latency; reduced random access time; row cycle time; subbank level 3D partitioning; time 19.5 ns; time 25 ns; Arrays; Bandwidth; Photonics; Random access memory; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
Computer Design (ICCD), 2014 32nd IEEE International Conference on
Conference_Location :
Seoul
DOI :
10.1109/ICCD.2014.6974654