Metamorphic double heterojunction InGaAs-InGaAlAs-InAlAs photodiodes on GaAs substrates for 40 Gbit/s long wavelength optical fiber communication

Author

Jang, J.H. ; Cueva, G. ; Dumka, D.C. ; Adesida, I. ; Fay, P. ; Hoke, W.E. ; Lemonias, P.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

4

fYear

2001

fDate

17-22 March 2001

Abstract

Metamorphic InGaAs-InGaAlAs-InAlAs double heterojunction P-i-I-N photodiodes were fabricated on GaAs substrates and characterized. They exhibited a low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a n3 dB bandwidth of 38 GHz for 1.55 /spl mu/m light.

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; electric current; gallium arsenide; indium compounds; optical fibre communication; optical receivers; p-i-n photodiodes; 1.55 nm; 38 GHz; 40 Gbit/s; 5 V; 500 pA; GaAs; GaAs substrates; InGaAs-InGaAlAs-InAlAs; bias; dark current; long wavelength optical fiber communication; long-haul optical fiber communication; metamorphic InGaAs-InGaAlAs-InAlAs double heterojunction P-i-I-N photodiodes; metamorphic double heterojunction InGaAs-InGaAlAs-InAlAs photodiodes; responsivity; Bandwidth; Cathodes; Gallium arsenide; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Photodiodes; Photonic band gap; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-655-9

Type

conf

Filename

927537