Title :
Multi Gbit/s, high-sensitivity all silicon 3.3 V optical receiver using PIN lateral trench photodetector
Author :
Schaub, J.D. ; Kuchta, D.M. ; Rogers, D.L. ; Min Yang ; Rim, K. ; Zier, S. ; Sorna, M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We report a 3.3 V silicon optical receiver consisting of a CMOS-compatible lateral trench PIN photodiode and a transimpedance amplifier that achieved a sensitivity of -17. 1 dBm at 2.5 Gb/s and demonstrated error-free (BER<10/sup -10/) operation up to 6.5 Gb/s at 845 nm. This is the highest reported sensitivity at data rates above 2.0 Gb/s and the fastest operation of any Si-based optical receiver.
Keywords :
elemental semiconductors; infrared detectors; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; silicon; 2.0 to 2.5 Gbit/s; 3.3 V; 6.5 Gbit/s; 845 nm; CMOS-compatible lateral trench PIN photodiode; PIN lateral trench photodetector; Si; data rates; error-free operation; fastest operation; high-sensitivity all silicon 3.3 V optical receiver; sensitivity; transimpedance amplifier; Bit error rate; Operational amplifiers; Optical amplifiers; Optical receivers; PIN photodiodes; Photodetectors; Semiconductor optical amplifiers; Silicon; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-655-9
