DocumentCode
174621
Title
Design space exploration of an NVM-based memory hierarchy
Author
Seungjae Baek ; Daeyeon Son ; Dongwoo Kang ; Jongmoo Choi ; Sangyeun Cho
Author_Institution
Dept. of Comput. Sci., Dankook Univ., Yongin, South Korea
fYear
2014
fDate
19-22 Oct. 2014
Firstpage
224
Lastpage
229
Abstract
Non-volatile memory (NVM) technologies support both byte addressability (like DRAM) and non-volatility (like disks). This characteristic makes it feasible for NVM to be employed at any layer of the memory hierarchy including CPU cache, main memory, file cache, storage, and hybrid memory. In this paper, we explore new challenges and opportunities that arise when NVM is introduced as a file cache in the memory hierarchy. One opportunity is that cache does not require long-term non-volatility since data are replaced when working sets are changed. This feature is well matched with NVM, which has limited retention time. In addition, the retention time of NVM is inverse proportional to the write latency, giving a chance to optimize the write performance. However, the limited retention time raises a new challenge that it may cause the hit ratio reduction and lead to cache performance degradation. To tackle this challenge, we propose a new inter-reference gap (IRG) based cache management scheme that writes data with different retention times according to their IRGs. Our proposal builds on the fact that block accesses of typical workloads show unique and regular patterns in terms of access intervals. Experimental results show that our scheme enhances system performance by up to 42% (33% on average), compared with the conventional LRU based cache management scheme.
Keywords
cache storage; random-access storage; CPU cache; DRAM; IRG; LRU; NVM-based storage memory hierarchy; byte addressability; cache management scheme; cache performance degradation; design space exploration; file cache; interreference gap; limited retention time; nonvolatile memory; write latency; Cache memory; Energy consumption; Nonvolatile memory; Performance gain; Phase change materials; Random access memory; System performance;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Design (ICCD), 2014 32nd IEEE International Conference on
Conference_Location
Seoul
Type
conf
DOI
10.1109/ICCD.2014.6974685
Filename
6974685
Link To Document