Title :
Modeling the transfer characteristic and harmonic distortion effects in scanning capacitance microscopy measurements
Author :
Ciappa, Mauro ; Stangoni, Maria ; Ciamplini, L. ; Malberti, Paolo ; Fichtner, Wolfgang
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
In this paper we investigate the dopant quantification error introduced in scanning capacitance microscopy measurements by the nonlinearity of the capacitance-to-voltage characteristic of MOS structures. The C-V response of the measurement set up is derived by finite element simulation and the systematic error introduced by signal processing is quantified by harmonic distortion analysis. It is shown that the investigated effect can lead to a systematic overestimate of the dopant concentration ranging from a factor of 2 up to a factor of 20, depending on the experimental conditions
Keywords :
MIS structures; capacitance measurement; doping profiles; finite element analysis; harmonic distortion; measurement errors; microscopy; modelling; semiconductor device measurement; silicon; transfer functions; C-V characteristic nonlinearity; C-V response; MOS structures; capacitance-to-voltage characteristic; dopant concentration overestimation; dopant quantification error; finite element simulation; harmonic distortion analysis; harmonic distortion effects; measurement setup; modeling; scanning capacitance microscopy measurements; signal processing; systematic error; transfer characteristic effects; Analytical models; Capacitance measurement; Capacitance-voltage characteristics; Distortion measurement; Finite element methods; Harmonic analysis; Harmonic distortion; Microscopy; Semiconductor process modeling; Signal processing;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2001. IMTC 2001. Proceedings of the 18th IEEE
Conference_Location :
Budapest
Print_ISBN :
0-7803-6646-8
DOI :
10.1109/IMTC.2001.928189
