Title :
High power InGaAsP/InP broad-waveguide single-mode ridge-waveguide lasers
Author :
Maiorov, M. ; Menna, R. ; Komissarov, A. ; Garbuzov, D. ; Connolly, J.
Author_Institution :
Princeton Lightwave, Inc., NJ, USA
Abstract :
Single-mode broad-waveguide separate confinement ridge-waveguide InGaAsP/InP diode lasers emitting in 1500 nm wavelength range have realized cw output power levels in excess of 400 mW. The high-power broad-waveguide structure design and ridge-waveguide fabrication technology along with device operational performance parameters will be discussed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1500 nm; 400 mW; InGaAsP-InP; InGaAsP/InP broad-waveguide single-mode ridge-waveguide lasers; cw output power; high-power broad-waveguide structure design; operational performance; ridge-waveguide fabrication; single-mode broad-waveguide separate confinement ridge-waveguide diode lasers; Chemical lasers; Erbium-doped fiber lasers; Indium phosphide; Laser modes; Optical device fabrication; Optical waveguides; Power generation; Power lasers; Pump lasers; Waveguide lasers;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-655-9
