• DocumentCode
    1746470
  • Title

    Vertically coupled GaAs-AlGaAs and GaInAsP-InP microring resonators

  • Author

    Grover, R. ; Absil, P.P. ; Van, V. ; Hryniewicz, J.V. ; Little, B.E. ; King, O. ; Johnson, F.G. ; Calhoun, L.C. ; Ho, P.-T.

  • Author_Institution
    Lab. for Phys. Sci., College Park, MD, USA
  • Volume
    3
  • fYear
    2001
  • fDate
    17-22 March 2001
  • Abstract
    Single transverse mode vertically coupled semiconductor microring resonators were made using a novel fabrication technique without regrowth. GaAs-AlGaAs and GaInAsP-InP devices are demonstrated.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; micro-optics; micromechanical resonators; optical communication equipment; optical directional couplers; optical fabrication; optical resonators; wavelength division multiplexing; DWDM; GaAs-AlGaAs; GaAs-AlGaAs microring resonators; GaInAsP-InP; GaInAsP-InP microring resonators; optical fabrication technique; semiconductor microring resonators; single transverse mode; vertically coupled; Etching; Gallium arsenide; Indium phosphide; Optical filters; Optical resonators; Polarization; Polymers; Refractive index; Resonance; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-55752-655-9
  • Type

    conf

  • Filename
    928359