The electric field switching in resonant, tunneling diode electroabsorption modulator

Author

Figueiredo, J.M.L. ; Ironside, C.N. ; Stanley, C.R.

Author_Institution

UCEH, Univ. do Algarve, Faro, Portugal

Volume

3

fYear

2001

fDate

17-22 March 2001

Abstract

A resonant tunneling diode(RTD) can be imbedded in an optical waveguide to produce a new type of integrated optoelectronic device which integrates an electronic amplifier with a waveguide electroabsorption modulator (EAM). The device is called the RTD-EAM and it is particularly well suited to high-speed, low voltage, digital operation. An expression for the magnitude of the electric field switching is derived and compared with an experimental measurement of the Franz-Keldysh band-edge shift at 1550 nm of the InAlGaAs semiconductor employed to form the optical waveguide; agreement to within 12% is obtained.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; resonant tunnelling diodes; 1550 nm; Franz-Keldysh band-edge shift; InAlGaAs; InAlGaAs semiconductor; RTD-EAM; electric field switching; electronic amplifier; high-speed low voltage digital operation; integrated optoelectronic device; optical waveguide; resonant tunneling diode electroabsorption modulator; waveguide electroabsorption modulator; High speed optical techniques; Integrated optics; Integrated optoelectronics; Optical devices; Optical modulation; Optical waveguides; Resonance; Resonant tunneling devices; Semiconductor diodes; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-655-9

Type

conf

Filename

928512