Low-damage etched/regrown interfaces of GaInAsP/InP wirelike laser with strain-compensated MQW structure

To evaluate etched/regrown interfaces of strain-compensated GaInAsP/InP five-quantum-well wirelike lasers with the wire widths of 43 nm and 70 nm fabricated by EB lithography, CH₄/H₂-reactive ion etching, and organo-metallic-vapor-phase-epitaxy regrowth, temperature dependences of the threshold current density, the spontaneous emission spectrum and efficiency were compared with those of un-etched quantum-well lasers. As a result, the product of the surface recombination velocity and the carrier lifetime S·τ at the etched/regrown interfaces was evaluated to be less than 2 nm at room temperature. No degradation in the spontaneous emission efficiency was observed within the measured temperature range up to 85°C for both lasers. These results indicate that high quality etched/regrown interfaces can be obtained with GsInAsP/InP fine structures