Title :
Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE
Author :
Lee, H.-J. ; Konishi, K. ; Maeda, O. ; Mizobata, A. ; Asami, K. ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
TlInGaAs/InP double heterostructure (DH) light emitting diodes (LEDs) were grown on (100) InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated up to 340 K in the wavelength range of 1.58 μm. Very small temperature variation in the electroluminescence (EL) peak energy (-0.09 meV/K) was observed, similar to the temperature variation of photoluminescence (PL) peak energy
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; thallium compounds; (100) InP substrates; 1.58 mum; 50 to 340 K; InP; Tl composition; TlInGaAs-InP; TlInGaAs/InP DH LEDs; double heterostructure light emitting diodes; electroluminescence peak energy; gas source MBE; gas source molecular beam epitaxy; photoluminescence peak energy; small temperature variation; temperature stable wavelength; DH-HEMTs; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Molecular beam epitaxial growth; Photonic band gap; Substrates; Temperature; Wavelength division multiplexing; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929029
