Title :
High speed 1.3 μm AlGaInAs DFB-LD with λ/4-shift grating
Author :
Takiguchi, T. ; Hanamaki, Y. ; Kadowaki, T. ; Tanaka, T. ; Takemi, M. ; Tomita, N. ; Mihashi, Y. ; Omura, E.
Author_Institution :
HF & Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
1.3 μm AlGaInAs DFB-LD with λ/4-shift grating has been developed for the first time. The light output power over 5 mW at 85°C has been obtained for the DFB-LD. Relaxation oscillation frequency (fr) as high as 11.2 GHz@5 mW at a negative detuning of -10 nm has been attained. Clearly opened eye diagram at 10 Gbps modulation has been also confirmed at 75°C, which demonstrate excellent transmission characteristics. Stable operation over 1700 hours at 10 mW@85°C in the preliminary life test has been confirmed
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; λ/4-shift grating; 1.3 mum; 11.2 GHz; 1700 h; 5 mW; 75 C; 85 C; AlGaInAs; high speed 1.3 μm AlGaInAs DFB-LD; light output power; negative detuning; relaxation oscillation frequency; stable operation; Conducting materials; Etching; Frequency; Gratings; High speed optical techniques; Optical materials; Optical waveguides; Power generation; Signal analysis; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929054
