• DocumentCode
    1746773
  • Title

    First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

  • Author

    Cui, Delong ; Hsu, Shawn ; Pavlidis, Dimitris

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    224
  • Lastpage
    227
  • Abstract
    The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped InP layer as emitter while the base was made with a 500 Å thick n-type InGaAs layer doped at 5×1018 cm -3. Microwave measurements indicated fT of more than 11 GHz at JC=8.25×104 A/cm2 for these MOCVD-grown InP/InGaAs PNP HBTs
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor growth; 11 GHz; 500 angstrom; InP/InGaAs PNP HBT layers; InP:Zn emitter layer; InP:Zn-InGaAs; MOCVD growth; device fabrication; high frequency operation; microwave measurements; n-type InGaAs base layer; Chemical vapor deposition; Etching; Fabrication; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Metallization; Organic chemicals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929098
  • Filename
    929098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1746773