Title :
First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition
Author :
Cui, Delong ; Hsu, Shawn ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped InP layer as emitter while the base was made with a 500 Å thick n-type InGaAs layer doped at 5×1018 cm -3. Microwave measurements indicated fT of more than 11 GHz at JC=8.25×104 A/cm2 for these MOCVD-grown InP/InGaAs PNP HBTs
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor growth; 11 GHz; 500 angstrom; InP/InGaAs PNP HBT layers; InP:Zn emitter layer; InP:Zn-InGaAs; MOCVD growth; device fabrication; high frequency operation; microwave measurements; n-type InGaAs base layer; Chemical vapor deposition; Etching; Fabrication; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Metallization; Organic chemicals;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929098
